The HORIBA LabRAM Odyssey Semiconductor is a specialized Raman system configured for semiconductor industry metrology, featuring automated wafer mapping, stress/strain analysis, and process control applications.
The HORIBA LabRAM Odyssey Semiconductor is a specialized configuration of the LabRAM Odyssey platform optimized for semiconductor materials characterization and process metrology. It is designed to meet the demands of semiconductor research and manufacturing environments, with features for automated wafer-scale Raman mapping, stress and strain analysis, crystalline quality assessment, and impurity characterization. The system provides sub-micron spatial resolution Raman mapping combined with the spectral precision required to detect small shifts in peak positions that indicate stress, strain, or compositional variation in silicon, germanium, silicon carbide, gallium nitride, and other semiconductor materials. Automated stage routines allow mapping of full wafer or selected die areas with user-defined grid density. The LabRAM Odyssey Semiconductor can be integrated with photoluminescence measurements for bandgap and defect characterization. It supports multiple laser wavelengths optimized for penetration depth control in layered semiconductor structures. The system is used in research on new semiconductor materials, optimization of epitaxial growth processes, and reliability studies of packaged devices. NewRoad provides the HORIBA LabRAM Odyssey Semiconductor in Israel for semiconductor research institutes and device characterization laboratories.
Confocal Raman (semiconductor metrology)
Si, Ge, SiC, GaN, III-V stress/strain, crystallinity
Automated wafer-scale and die-level mapping
Photoluminescence (PL) integration
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